1.-Nanovias FIB-etching and filling in a micro-nano interposer for molecular electronics
NANOTECH, 2, 539-542 (2012)
2.-Hydrophobic direct bonding of silicon reconstructed surfaces
MICROSYSTEM TECHNOLOGIES 19, 675 (2013)
3.-Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment
Applied Surface Science 288 (2014) 83– 89
Nanovias FIB-etching and filling in a micro-nano interposer for molecular electronics
NANOTECH, 2, 539-542 (2012)
Authors
G.L. Gac, G. Audoit, A. Thuaire, C. Rauer, H. Moriceau, X. Baillin
CEA Grenoble, FR
Abstract
As molecular electronics is getting more and more explored, a device enabling electrical characterization of the synthesized molecules becomes necessary. A micro-nano interposer is thus developed to allow connection between a molecular circuit and mesoscopic electrodes with atomic scale precision. The interposer includes nano-to-micro scale interconnection. The nanovias fabrication requires the use of a FIB for the etching and filling steps. Several aspect ratio vias are nanofabricated in order to investigate etching and deposition processes. Several parameters configuration are tested and investigation is made to understand deposition evolution and improve vias quality (geometry and filling). Nanovias with aspect ratios between 2 and 6 are presented to illustrate the etching and deposition optimizations.
Hydrophobic direct bonding of silicon reconstructed surfaces
MICROSYSTEM TECHNOLOGIES 19, 675 (2013)
Authors
C. Rauer1, F. Rieutord2, J. M. Hartmann1, A. M. Charvet1, F. Fournel1, D. Mariolle1, C. Morales1,2, H. Moriceau1
1) CEA,LETI, Minatec Campus, 17 rue des martyrs - 34054 Grenoble Cedex 9, France
2) CEA,INAC, 17 rue des martyrs - 34054 Grenoble Cedex 9, France
Abstract
The bonding of hydrophobic, reconstructed (001) Si surfaces obtained with high temperature H2processes has been studied with atomic force microscopy, low energy electron diffraction spectroscopy, X-ray reflectivity and bonding energy measurements. Surface reconstruction is shown to strongly affect bonding mechanisms. As a consequence, bonding energies of such surfaces are significantly higher, in the room temperature −500 °C range, than those of “HF-last” surfaces.
Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment
Applied Surface Science 288 (2014) 83– 89
Authors
Marek Kolmer(a), Szymon Godlewski(a), Rafal Zuzak(a), Mateusz Wojtaszek(a), Caroline Rauer(b), Aurélie Thuaire(b), Jean-Michel Hartmann(b), Hubert Moriceau(b), Christian Joachim(c), Marek Szymonski(a)
(a) Centre for Nanometer-Scale Science and Advanced Materials, NANOSAM, Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian
University, Reymonta Str. 4, PL 30-059 Krakow, Poland
(b) CEA, LETI, Minatec Campus, 17, Avenue des Martyrs, 38 054 Grenoble Cedex 9, France
(c) Nanosciences Group & MANA Satellite, CEMES-CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse, France
Abstract
Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects and atomic nanostructures are required for the successful development of novel nanoscale electronic devices. Atomically flat and reconstructed Si(0 0 1):H surfaces are serious candidates for that role. In this work such Si:H surfaces were prepared in a cleanroom environment on 200 mm silicon wafers with a hydrogen bake and were subsequently bonded together to ensure the surface protection, and allow their transportation and storage for several months in air. Given the nature of the bonding, which was hydrophobic with
weak van der Waals forces, we were then able to de-bond them in UHV. We show that the quality of the de-bonded Si:H surface enables the “at will” construction of sophisticated and complex dangling bond (DB) nanostructures by atomically precise scanning tunneling microscope (STM) tip induced desorption of hydrogen atoms. The DB structures created on slightly doped Si:H samples were characterized by scanning tunneling microscopy and spectroscopy (STM/STS) performed at 4 K. Our results demonstrate that DB nanostructures fabricated on UHV de-bonded Si(0 0 1):H wafers could be directly incorporated in future electronics as interconnects and parts of nanoscale logic circuits.
