1.- Fabrication and manipulation of solid-state SiO2 nano-gears on a gold surface Nanotechnology Volume 22 Number 27 (2011)

2.- Surface conductance measurements on a MoS2 surface using a UHV-NANOPROBE system Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

3.- Solid State Nano Gears Manipulations Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

4.- Atomic scale interconnection machine Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

5.- The DUF Project: A UHV Factory for Multi-interconnection of a Molecule Logic Gates on Insulating Substrate Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

6.- Multi-probe characterization of 1D and 2D nanostructures assembled on Ge(001) surface by gold atom deposition and annealing Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

7.- Controlled clockwise and anticlockwise rotational switching of a molecular motor Nature Nanotechnology , vol 8, January (2013)

8.- Leakage current in atomic-size surface interconnects Applied Physics Letters 103, 161603 (2013)

Fabrication and manipulation of solid-state SiO2 nano-gears on a gold surface

Nanotechnology Volume 22 Number 27 (2011)

Authors
J Deng(1), C Troadec(1,3), F Ample(1) and C Joachim(1,2)
(1) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore
(2) Nanoscience Group and MANA Satellite, CEMES/CNRS, 29 Rue Marvig, BP 94347, 31055 Toulouse Cedex, France
(3) Author to whom any correspondence should be addressed

Abstract
A process is presented to fabricate solid-state nano-gears down to a 60 nm outer diameter with six teeth, where the 350 nm diameter ones already have 24 teeth. The small gears are free to move on a polycrystalline gold surface. The gears can be manipulated one by one, using an atomic force microscope (AFM) tip, to construct a train of gears where mechanical motion can be transmitted from one gear to another by mastering the surface friction. This is a first step on the way to bridge the fabrication gap between micro fabricated and molecule gears.



Surface conductance measurements on a MoS2 surface using a UHV-NANOPROBE system

Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

Authors
R. Thamankar (1), O. A. Neucheva (1), T. L. Yap (2), C. Joachim (3)
(1) IMRE, A*STAR (agency for Science, Technology and Research), 3 Research Link, Singapore 117602. Email: Thamankarrm@imre.a-star.edu.sg
(2) National University of Singapore (Singapore)
(3) CEMES and MANA Satellite, CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex, France

Abstract
We present detailed information about the first experiments performed on the A*STAR UHV-Nanoprobe system in Singapore. As a model system, naturally occurring MoS2 surface was considered for those measurements. This surface is interesting as it is easy to prepare and shows a surface band gap of about 1.3 eV close to that of a Si(100)H surface. Two tip surface I–V measurements were performed by varying the inter-tip distance down to 100 nm. A transition from nonlinear to linear I–V characteristics are seen when the 2 tip separation is below 1 μm.

Solid State Nano Gears Manipulations

Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

Authors
 C. Troadec (1), D. Jie (1), F. Ample (1), R. Thamankar (1) and C. Joachim (2)
(1) IMRE, A*STAR (agency for Science, Technology and Research), 3 Research Link, Singapore 117602. Email: cedric-t@imre.a-star.edu.sg
(2) CEMES and MANA Satellite, CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex, France

Abstract
The detailed fabrication and manipulations of solid state nano gears up to 350 nm in diameter is reported. Atomic force microscopy (AFM) and ultra high vacuum (UHV) scanning tunneling microscopy (STM) are used to maneuver the gears. The aim is to bridge the gap between the current solid state gears and the now available nanoscale gears. As in many technology integrations, miniaturization is a way to boost efficiency and an opening to new applications.

Atomic scale interconnection machine

Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

Authors
O.A. Neucheva (1), R. Thamankhar (1), T.L. Yap (2), C. Troadec (1), J. Deng (1), C.  Joachim (3)
(1) IMRE, A*STAR (agency for Science, Technology and Research), 3 Research Link, Singapore 117602. Email: neuchevaoa@imre.a-star.edu.sg
(2) National University of Singapore (Singapore)
(3) CEMES and MANA Satellite, CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex, France

Abstract
An atomic scale multiprobe interconnection machine is described in the context of building of the molecular devices. It combines various techniques for fabrication and surface analysis. The characterization part consists of low temperature scanning tunneling microscope (LT-STM), four probes variable temperature scanning tunneling microscope (Multiprobe), high resolution scanning electron microscope (SEM). The fabrication part has field ion microscope (FIM), evaporators and nanoimprinter. The characteristics of every part of the instrument and the preliminary experiments on Si(100) surface are discussed.

The DUF Project: A UHV Factory for Multi-interconnection of a Molecule Logic Gates on Insulating Substrate

Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

Authors
D. Martrou, R. Laloo, L. Guiraud, P. Abeilhou, O. Guillermet, S. Gauthier, J. Polesel Maris, M. Venegas, A. Hinault, A. Bodin, F. Chaumeton , A. Piednoir, H. Guo, T. Leoni
Nanoscience Group CEMES/CNRS, 29 rue J Marvig, BP 94347, 31055 Toulouse Cedex, France. Email: martrou@cemes.fr

Abstract
The scientific and technical challenges involved in the building of the planar electrical connection of an atomic scale circuit to N electrodes (N > 2) on insulating substrates are presented. In the Nanoscience group of Toulouse, the UHV factory has been developed since ten years in order to realize under UHV the five levels of interconnections on insulating substrate, to characterize by NC-AFM the different steps and to measure the electrical properties of the realized device.

Multi-probe characterization of 1D and 2D nanostructures assembled on Ge(001) surface by gold atom deposition and annealing

Atomic Scale interconnection Machines, Springer Series Advances in Atom and Single Molecule Machines: ISBN 978-3-642-28171-6 (2012).

Authors
M. Wojtaszek, M. Kolmer, S. Godlewski, J. Budzioch, B. Such, F. Krok, and M. Szymonski
Faculty of Physics, Astronomy and Applied Computer Science, Research Center of nanometer-Scale Science and Advenced Materials, NANOSAM, Jagiellonian University, Krakow, Poland. Email: ufszymon@cyf-kr.edu.pl

Abstract
The demand to discover new, alternative solutions in future electronics has currently focused the attention on the possible use of single atomic wires and conductive mesa pads as components in electronic circuits. For such applications, we need a good knowledge of structural and electronic properties of 1D and 2D conductive nanostructures fabricated on large and/or moderate band gap semiconductor surfaces. This chapter is reporting on case studies invoking preparation of well organized atomic wires and 2D conductive pads by self-assembly of gold atoms on clean, reconstructed Ge(001) surface. Structural characterization of the fabricated nanostructures was performed with atomic resolution on low temperature scanning tunneling microscope (LT-STM) and multi-probe STM designed by Omicron Nanotechnology GmbH. Using the far field, high resolution scanning electron microscope (SEM), the pre-prepared nanostructures were identified after an UHV transfer into a multi-probe station of the system, and their surface conductance was measured with two STM probes. The conductance dependence as a function of the inter-probe distance confirmed 2D (surface) character of the Au rich nanostructures assembled on Ge(001).

Controlled clockwise and anticlockwise rotational switching of a molecular motor

Nature Nanotechnology , vol 8, January (2013)

Authors
U. G. E. Perera (1), F. Ample (4), H. Kersell (1), Y.Zhang (1), G. Vives (2), J. Echeverria (2), M. Grisolia (2), G. Rapenne (2,3*),C. Joachim (2,4*) and S-W. Hla (1*)
(1) Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701, USA,
(2) GNS & MANA Satellite, CEMES, CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex, France,
(3) Université de Toulouse, UPS, 118 route de Narbonne, 31062 Toulouse, France,
(4) IMRE, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore.*e-mail: hla@ohio.edu; joachim@cemes.fr; rapenne@cemes.fr           

Abstract
The design of artificial molecular machines1–19 often takes inspiration from macroscopic machines13–19. However, the parallels between the two systems are often only superficial, because most molecular machines are governed by quantum processes. Previously, rotary molecular motors3 powered by light4–6 and chemical7–11 energy have been developed. In electrically driven motors, tunnelling electrons from the tip of a scanning tunnelling microscope have been used to drive the rotation of a simple rotor12 in a single direction and to move a four-wheeled molecule across a surface13. Here, we show that a stand-alone molecular motor adsorbed on a gold surface can be made to rotate in a clockwise or anticlockwise direction by selective inelastic electron tunnelling through different subunits of the motor. Our motor is composed of a tripodal stator for vertical positioning, a five-arm rotor for controlled rotations, and a ruthenium atomic ball bearing connecting the static and rotational parts. The directional rotation arises from sawtooth-like rotational potentials, which are solely determined by the internal molecular structure and are independent of the surface adsorption site.

Leakage current in atomic-size surface interconnects

Applied Physics Letters 103, 161603 (2013);

Authors
Mikael Kepenekian,(1,2) Roberto Robles,(1,2) Christian Joachim,(3,4) and Nicolas Lorente(1,2)
(1) ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) Spain
(2) CSIC-Consejo Superior de Investigaciones Cientificas, ICN2 Building, Campus UAB, 08193 Bellaterra(Barcelona) Spain
(3) GNS and MANA satellite, Centre d’Elaboration des Mat_eriaux et d’Etudes Structurales (CEMES), CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex, France
(4) Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore

Abstract
The current lost into a doped silicon substrate from a surface-supported nanowire is evaluated using transport calculations based on density functional theory. The calculations are performed for an infinite non-periodic wire for various types of dopants. Two concentration limits are explored: the single-dopant and the massively doped limits. Our calculations permit us to conclude that n-doped Si will be less leaky than p-doped Si. For the low bias at which these nanodevices will operate, leakage currents will be less than 10% for n-doped Si substrates and 20% for p-doped ones.